IMP11 |
RFQ for IMP11 Required Field |
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| Technical/Catalog Information | IMP11T110 |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Diode Configuration | 2 Pair Common Anode |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Current - Reverse Leakage @ Vr | 100nA @ 70V |
| Reverse Recovery Time (trr) | 4ns |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SC-74-6, SSOT-6 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IMP11T110 IMP11T110 |
| Product | Manufacturers | Pack | D/C |
| IMP11 | - | SOT23-6 | N/A |
Typical Application |
Features |
| ·Ultra high speed switching | ·Small mold type. (SMD6)·High reliability |
| Parameter | Symbol | Limits | Unit |
| Reverse voltage (repetitive peak) |
VRM | 80 | V |
| Reverse voltage (DC) |
VR | 80 | V |
| Forward current (Single) |
IFM | 300 | mA |
| Average rectified forward current (Single) |
IO | 100 | mA |
| Surge current (t=1us) (Single) | Isurge | 4 | A |
| Power dissipation (TOTAL)(*1) |
Pd | 300 | mW |
| Junction temparature |
Tj | 150 | |
| Storage temperature |
Tstg | -55 to +150 |
